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Photoemission study of Ce/Ta(110) and Ce/W(110) interfaces and the catalytic oxidation effect

机译:Ce / Ta(110)和Ce / W(110)界面的光发射研究及催化氧化作用

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摘要

Photoemission spectroscopy was used to study Ce/Ta(110) and Ce/W(110) interfaces, and the catalytic oxidation effect on both surfaces. A weak Ce/Ta interface reaction is illustrated by the reduced Ta 4f surface core-level shift (SCS) upon Ce adsorption. No Ce/Ta interdiffusion was found. The Ce layer may greatly enhance the oxidation of Ta(110). Oxidation of Ce/Ta(110) at 300 K yields one monolayer (ML) of Ta suboxide (~TaO), followed by the rapid formation of Ta[subscript]2O[subscript]5. Ce/W(110) adsorption patterns were determined by low-energy electron diffraction. For [theta] ≤ 0.5 ML, the adsorption structure is characterized by one-dimensional commensuration along the (110) direction. It changes abruptly to a hexagonal pattern after 0.5 ML. The interatomic spacing shrinks continuously from 9% larger than that for [gamma]-Ce to 3% smaller than that for [alpha]-Ce. Correspondingly the Ce 4f photoelectron spectrum evolves to resemble that of [alpha]-Ce. W 4f core levels are also correlated to the adsorption structure. A significantly widened W SCS is found at low Ce coverages. After the formation of the hexagonal patterns, the Ce-W registration is lost, and the interaction within the Ce layer increases. The SCS for the top layer of W is partially restored. Electronic charge polarization from Ce toward the W (or Ta) substrate is believed to be the key mechanism for the Ce-induced SCS. The interface charge polarization affects deeper layers in the substrate. The W 4f \u22bulk\u22 component broadens slightly toward lower binding energies, despite no major interface disruption. Oxidation of Ce/W(110) results in the rapid formation of 1 ML of W surface monoxide. No other W oxides were observed. A comparative experiment on O[subscript]2/Ce/W(111) shows the growth of WO[subscript]3 instead of WO. Therefore the surface monoxide formation found on Ce/Ta(110) and Ce/W(110) is not an inherently necessary step in the catalytic oxidation, but rather an interface product on the most densely-packed bcc (110) surfaces. Ce/Ta and Ce/W interface reactions are excluded as the general cause of the catalytic oxidation. An earlier suggestion is reconfirmed that changes in the Ce oxide states convert O[subscript]2 to oxygen ions and thus promote the oxidation of the substrate.
机译:用光电子能谱研究Ce / Ta(110)和Ce / W(110)的界面,以及两个表面上的催化氧化作用。 Ce吸附后Ta 4f表面核心能级位移(SCS)降低说明了Ce / Ta界面反应弱。没有发现Ce / Ta相互扩散。 Ce层可以大大增强Ta(110)的氧化。 Ce / Ta(110)在300 K的氧化作用产生一层单层(ML)的Ta低价氧化物(〜TaO),然后快速形成Ta [下标] 2O [下标] 5。 Ce / W(110)吸附模式是通过低能电子衍射确定的。对于θ≤0.5ML,吸附结构的特征在于沿(110)方向的一维比对。 0.5毫升后,它突然变为六边形图案。原子间间距从比γ-Ce的大9%缩小到比α-Ce的小3%。相应地,Ce 4f光电子能谱演变为类似于α-Ce的能谱。 W 4f核心水平也与吸附结构相关。在低Ce覆盖范围内发现W SCS显着加宽。在形成六边形图案之后,Ce-W配准丢失,并且Ce层内的相互作用增加。 W顶层的SCS被部分还原。从Ce到W(或Ta)衬底的电荷极化被认为是Ce诱导的SCS的关键机制。界面电荷极化影响基板中的较深层。尽管没有主要的界面破坏,但W 4f的成分逐渐向较低的结合能扩展。 Ce / W(110)的氧化导致1 ML W表面一氧化碳的快速形成。没有观察到其他钨氧化物。在O 2 / Ce / W(111)上进行的比较实验表明,WO 3代替WO生长。因此,在Ce / Ta(110)和Ce / W(110)上发现的表面一氧化碳形成不是催化氧化过程中固有的必需步骤,而是在堆积最密的bcc(110)表面上的界面产物。排除Ce / Ta和Ce / W界面反应作为催化氧化的一般原因。再次证实了较早的建议,即Ce氧化物状态的变化将O 2转化为氧离子,从而促进了底物的氧化。

著录项

  • 作者

    Gu, Chun;

  • 作者单位
  • 年度 1991
  • 总页数
  • 原文格式 PDF
  • 正文语种 en
  • 中图分类
  • 入库时间 2022-08-20 20:23:44

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